Parallel algorithms for the simulation and visualisation of interacting few-electron quantum transport in laterally patterned low-dimensional semiconductors
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چکیده
A parallelised Chebyschev accelerated over-relaxation algorithm is developed for simulating the few electron problem inhigh magnetic fields. A novel form of resonant tunnelling is proposed to occur through a single potential barrier due to the confining potential provided to one electron by a following electron in quasi-one dimensional current flow.
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تاریخ انتشار 2007